Infineon RF GaN-on-Silicon, a European high-performance, cost-efficient technology for RF power applications

Thomas Roedle, Infineon Technologies

Abstract

GaN HEMT’s have become the mainstream technology, largely replacing Si LDMOS in wireless infrastructure applications. For these applications GaN-on-Si can achieve state-of-the-art performance at a cost position enabling full integration as Monolithic Microwave Integrated Circuit (MMIC). This becomes particularly important for 6G applications in the FR3 frequency range where incumbent technologies are limited due to higher die cost per area. This presentations shows performance examples of Infineon’s latest RF GaN-on-Si technology.

Curriculum Vitae

Thomas Rödle has a background in Semiconductor Physics with a PhD degree from Göttingen University/Germany. He held positions at several semiconductor companies ranging from technical roles to project management and R&D management positions. Thomas’s current responsibility is Project Owner for Infineon’s Wireless Infrastructure Product Group. His interest is semiconductor technologies for power amplifiers used in wireless infrastructure applications.